Problem 1 Velocity Saturated Model
NMOS: VTHN=0.25V, n=350cm2
/(Vs), Cox=0.95 F/cm2
PMOS: VTHP=-0.25V, p=175cm2
/(Vs), Cox=0.65 F/cm2
a) In an inverter, the width of the NMOS is 1um. Using Velocity Saturated model to
make Idsatp=Idsatn, what’s the width of the PMOS? (L=100nm in this problem)
c) In a NAND2 gate, keep the PMOS the same width as you got in part (a), if you still
want to make Idp=Idn, what’s the width of the stacked NMOS?
e) Repeat part (c) for a NAND3 gate.
Recently Asked Questions
- Office of Personnel Management OPM CMP 610 Project 2: Authentication, Authorization and Access Control Organizations have two concerns surrounding access to
- Office of Personnel Management OPM CMP 610 Project 1: Security Models Most companies and agencies implement security models to protect the confidentiality,
- In the TCA cycle , the step in which succinyl-CoA is converted to succinate is classified as a ___________________ reaction .