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Gallium arsenide (GaAs) and indium arsenide (InAs) both have the zinc blende crystal structure and are soluble in each other at all concentrations.

Gallium arsenide (GaAs) and indium arsenide (InAs) both have the zinc blende crystal structure and are soluble in each other at all concentrations. Determine the concentration in weight percent of InAs that must be added to GaAs to yield a unit cell edge length of 0.5820 nm. The densities of GaAs and InAs are 5.316 and 5.668 g/cm3, respectively.

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